制造商:
Nexperia
PMXB360ENEAZ
Power MOSFET, N Channel, 80 V, 1.1 A, 0.345 ohm, DFN1010D, Surface Mount
安富利制造商模型#:
PMXB360ENEAZ
RoHS 10 Compliant
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
技术参数
- Logic-level compatible
- Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
- Tin-plated 100 % solderable side pads for optical solder inspection
- ElectroStatic Discharge (ESD) protection > 2 kV HBM
- AEC-Q101 qualified
技术特性
查找类似的料号|
|
描述 | 值 |
|---|---|---|
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漏源电压Vds | 80 |
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晶体管外壳样式 | SOT-1215 |
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漏源导通电阻 | 450 |
|
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功率耗散 | 1.07 |
|
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连续漏极电流Id | 1.1 |
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MSL 级别 | MSL 1 - Unlimited |
|
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引脚数 | 3 |
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导通电阻测试电压 | 10 |
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沟道类型 | N |
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最高工作温度 | 150 |
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晶体管安装 | Surface Mount |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541210080 |
| HTSN: | 8541210075 |