制造商:
Nexperia
PBSS4160PANSX
Trans GP BJT NPN 60V 1A 8-Pin SOT-1118D T/R
安富利制造商模型#:
PBSS4160PANSX
RoHS 10 Compliant
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/PNP complement: PBSS4160PANPS. PNP/PNP complement: PBSS5160PAPS.
技术参数
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- Exposed heat sink for excellent thermal and electrical conductivity
- High energy efficiency due to less heat generation
- Suitable for Automatic Optical Inspection (AOI) of solder joints
- AEC-Q101 qualified
技术特性
查找类似的料号|
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描述 | 值 |
|---|---|---|
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最高工作温度 | 150 °C |
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晶体管安装 | Surface Mount |
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资质 | AEC-Q101 |
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引脚数 | 8 |
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晶体管极性 | Dual NPN |
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晶体管外壳样式 | SOT-1118D |
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最大集电极发射极电压 | 60 |
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过渡频率 | 175 |
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直流电流增益hFE最小值 | 290@100mA@2V |
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MSL 级别 | 1 |
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连续集电极电流 | 1 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290075 |