制造商:
Nexperia
PBSS4112PANP115
Trans GP BJT NPN/PNP 120V 1A 6-Pin DFN T/R
安富利制造商模型#:
PBSS4112PANP,115
RoHS 10 Compliant
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP.
技术参数
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High efficiency due to less heat generation
- AEC-Q101 qualified
技术特性
查找类似的料号|
|
描述 | 值 |
|---|---|---|
|
|
MSL 级别 | MSL 1 - Unlimited |
|
|
最高工作温度 | 150 |
|
|
直流电流增益hFE最小值NPN | 240 |
|
|
直流电流增益hFE最小值PNP | 190 |
|
|
过渡频率NPN | 120 |
|
|
最大集电极发射极电压NPN | 120 |
|
|
连续集电极电流PNP | 1 |
|
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功率耗散PNP | 1.45 |
|
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过渡频率PNP | 100 |
|
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最大集电极发射极电压PNP | 120 |
|
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连续集电极电流NPN | 1 |
|
|
晶体管安装 | Surface Mount |
|
|
晶体管极性 | NPN |
|
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晶体管外壳样式 | SOT-1118 |
|
|
引脚数 | 6 |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | 8541290080 |
| HTSN: | 8541290075 |
文档
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文档
| 标题 | 下载 | 类别 | 发布日期 |
|---|---|---|---|
| NXP-201601011F01 PCN | EOL-Documentation | 20160109 | |
| CHANGE OF BOND WIRE AND NEW 2ND SOURCE MOLD COMPOUND IN DFN2020-3 AND DFN2020-6 | EOL-Documentation | ||
| NXP-201601011F01 PCN | Other-Documents | 20160109 |