MT53E2G32D4DE-046 WT:C | Micron DRAM | Avnet Asia Pacific

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MT53E2G32D4DE-046 WT:C

DRAM, Mobile LPDDR4, 64 Gbit, 2G x 32bit, 2.133 GHz, TFBGA, 200 Pins

MT53E2G32D4DE-046 WT:C | DRAM | Micron
Micron
制造商: Micron
产品分类: 内存, DRAM
安富利制造商模型#: MT53E2G32D4DE-046 WT:C
规格书
MT53E2G32D4DE-046 WT:C
RoHS 6 Compliant

MT53E2G32D4DE-046 WT:C is a LPDDR4X/LPDDR4 SDRAM. The 16Gb mobile low-power DDR4 SDRAM with low VDDQ (LPDDR4X) is a high-speed, CMOS dynamic random-access memory device. This device is internally configured with 2 channels or 1 channel ×16 I/O, each channel having 8-banks.

技术参数

  • 16n prefetch DDR architecture, 8 internal banks per channel for concurrent operation
  • Single-data-rate CMD/ADR entry, bidirectional/differential data strobe per byte lane
  • Programmable READ and WRITE latencies (RL/WL), programmable and on-the-fly burst lengths (BL=16,32)
  • Directed per-bank refresh for concurrent bank operation and ease of command scheduling
  • Up to 8.5GB/s per die x16 channel, on-chip temperature sensor to control self refresh rate
  • Partial-array self refresh (PASR), selectable output drive strength (DS), clock-stop capability
  • 8GB (64Gb) total density, 4266Mb/s data rate per pin
  • 200-ball TFBGA package
  • Operating temperature rating range from -25°C to +85°C

技术特性

查找类似的料号
描述 值
额定电源电压 1.1 V
存储密度 64 Gbit
引脚数 200
最低工作温度 -25 °C
最高工作温度 85 °C
时钟频率最大值 2.133 GHz

ECCN / UNSPSC

描述 值
ECCN: EAR99
全部清除 比较 (0/10)