制造商:
Micron
MT46H32M32LFB5-5 IT:B
DRAM Chip Mobile LPDDR SDRAM 1G-Bit 32Mx32 1.8V 90-Pin VF-BGA Tray
安富利制造商模型#:
MT46H32M32LFB5-5 IT:B
RoHS 10 Compliant
The 1Gb Mobile LPDDR die contained within this package is a high-speed CMOS, dynamic random access memory containing 1,073,741,824 bits. It is internally configured as a quad-bank DRAM. Each of the x16’s 268,435,456-bit banks is organized as 16,384 rows by 1024 columns by 16 bits. Each of the x32’s 268,435,456-bit banks is organized as 8192 rows by 1024 columns by 32 bits.
技术参数
- Vdd/Vddq = 1.70–1.95V
- Bidirectional data strobe per byte of data (DQS)
- Internal, pipelined double data rate (DDR) architecture; 2 data accesses per clock cycle
- Differential clock inputs (CK and CK#)
- Commands entered on each positive CK edge
- DQS edge-aligned with data for READs; center aligned with data for WRITEs
- 4 internal banks for concurrent operation
- Data masks (DM) for masking write data—one mask per byte
- Programmable burst lengths (BL): 2, 4, 8, or 161
- Concurrent auto precharge option is supported
- Auto refresh and self refresh modes
- 1.8V LVCMOS-compatible inputs
- On-chip temperature sensor to control self refresh rate
- Partial-array self refresh (PASR)
- Deep power-down (DPD)
- STATUS READ REGISTER (SRR) supported2
- Selectable output drive strength
- Clock stop capability
- 64ms refresh
技术特性
查找类似的料号|
|
描述 | 值 |
|---|---|---|
|
|
时钟频率最大值 | 200 MHz |
|
|
存储密度 | 1 Gbit |
|
|
集成电路外壳/封装 | VFBGA |
|
|
额定电源电压 | 1.8 V |
|
|
最低工作温度 | -40 °C |
|
|
最高工作温度 | 85 °C |
|
|
引脚数 | 90 |
|
|
集成电路安装 | Surface Mount |
|
|
DRAM类型 | Mobile LPDDR SDRAM |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | PARTS... |
| HTSN: | PARTS... |