MT25QL512ABB8ESF-0SIT | Micron 闪存 | Avnet Asia Pacific

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MT25QL512ABB8ESF-0SIT

Flash Memory, Serial NOR, 512 Mbit, 64M x 8bit, Serial SPI, 16 Pins, SOIC W

MT25QL512ABB8ESF-0SIT | 闪存 | Micron
Micron
制造商: Micron
产品分类: 内存, 闪存
安富利制造商模型#: MT25QL512ABB8ESF-0SIT
RoHS 10 Compliant

The MT25Q is a high-performance multiple input/output serial Flash memory device. It features a high-speed SPI-compatible bus interface, execute-in-place (XIP) functionality, advanced write protection mechanisms, and extended address access. Innovative, high-performance, dual and quad input/output commands enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

技术参数

  • SPI-compatible serial bus interface
  • Single and double transfer rate (STR/DTR)
  • Clock frequency
    • 133 MHz (MAX) for all protocols in STR
    • 90 MHz (MAX) for all protocols in DTR
  • Dual/quad I/O commands for increased throughput up to 90 MB/s
  • Supported protocols in both STR and DTR
    • Extended I/O protocol
    • Dual I/O protocol
    • Quad I/O protocol
  • Execute-in-place (XIP)
  • PROGRAM/ERASE SUSPEND operations
  • Volatile and nonvolatile configuration settings
  • Software reset
  • Reset pin available
  • 3-byte and 4-byte address modes
    • enable memory access beyond 128Mb
  • Dedicated 64-byte OTP area outside main memory
    • Readable and user-lockable
    • Permanent lock with PROGRAM OTP command
  • Erase capability
    • Bulk erase
    • Sector erase 64KB uniform granularity
    • Subsector erase 4KB, 32KB granularity
  • Security and write protection
    • Volatile and nonvolatile locking and software write protection for each 64KB sector
    • Nonvolatile configuration locking
    • Password protection
    • Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size
    • Program/erase protection during power-up
    • CRC detects accidental changes to raw data
  • Electronic signature
    • JEDEC-standard 3-byte signature (BA20h)
    • Extended device ID: two additional bytes identify device factory options
  • JESD47H-compliant
    • Minimum 100,000 ERASE cycles per sector
    • Data retention: 20 years (TYP)

技术特性

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描述
引脚数 16
集成电路外壳/封装 SOIC W
产品范围 3V Serial NOR Flash Memories
集成电路安装 Surface Mount
最低工作温度 -40 °C
最高工作温度 85 °C
最小电源电压 2.7 V
额定电源电压 3 V
存储密度 512 Mbit
闪存类型 Serial NOR
接口类型 SPI
存储器配置 64M x 8bit
时钟频率最大值 133 MHz
最大电源电压 3.6 V
存取时间 6 ns

ECCN / UNSPSC

描述
ECCN: 3A991.b.1.a
计划交货期 B: PARTS...
HTSN: PARTS...
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