制造商:
KIOXIA
TC58BVG1S3HTAI0
2Gbit, generation: 24nm, ECC logic on the chip, VCC=2.7 to 3.6V
安富利制造商模型#:
TC58BVG1S3HTAI0
RoHS Non-Compliant
The TC58BVG1S3HTAI0 is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks. The device has a 2112-byte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
技术参数
• Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read • Mode control Serial input/output Command control • Number of valid blocks Min 2008 blocks Max 2048 blocks • Power supply VCC = 2.7V to 3.6V • Access time Cell array to register 40 µs typ. (Single Page Read) / 55us typ. (Multi Page Read) Serial Read Cycle 25 ns min (CL=50pF) • Program/Erase time Auto Page Program 330 µs/page typ. Auto Block Erase 2.5 ms/block typ. • Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 µA max
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | 3A991.b.1.a |
| 计划交货期 B: | 8542320050 |
| HTSN: | 8542320051 |