IS62WV6416BLL-55BLI-TR | ISSI SRAM | Avnet Asia Pacific

闲置警告对话框

由于闲置,您的会话即将超时。请单击“确定”以将您的时间额外延长 30 分钟。

IS62WV6416BLL-55BLI-TR

SRAM Chip Async Single 3.3V 1M-Bit 64K x 16 55ns 48-Pin mBGA T/R

ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS62WV6416BLL-55BLI-TR
RoHS 6 Compliant

The IS62WV6416BLL are high speed, 1M bit static RAMs organized as 64K words by 16 bits. It is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. When CS1\ is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1\ is LOW, CS2 is HIGH and both LB\ and \ are HIGH, the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE/) controls both writing and reading of the memory. A data byte allows Upper Byte (UB/) and Lower Byte (LB\ access. The IS62WV6416BLL are packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II) .

技术参数

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation: 30 mW (typical) operating 15 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply: 2.5V-3.6V Vdd
  • Fully static operation: no Clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available
  • 2CS Option Available
  • Lead-free available

技术特性

查找类似的料号
描述
集成电路安装 Surface Mount
集成电路外壳/封装 mBGA
引脚数 48
最高工作温度 85 °C
额定电源电压 3.3 V
最大电源电压 3.6 V
SRAM类型 SDR
存储密度 1 Mbit
最小电源电压 2.5 V
最低工作温度 -40 °C

ECCN / UNSPSC

描述
ECCN: EAR99
计划交货期 B: PARTS...
HTSN: PARTS...
全部清除 比较 (0/10)