IS62WV5128EBLL-45HLI | ISSI SRAM | Avnet Asia Pacific

闲置警告对话框

由于闲置,您的会话即将超时。请单击“确定”以将您的时间额外延长 30 分钟。

IS62WV5128EBLL-45HLI

SRAM Chip Async Single 2.8V/3.3V 4M-Bit 512K x 8 45ns 32-Pin STSOP-I

ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS62WV5128EBLL-45HLI
RoHS 6 Compliant

The IS62WV5128EBLL are high speed, low power, 4M bit SRAMs organized as 512K words by 8 bits. It is fabricated high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1\ is HIGH (deselected) or when CS1\ is low and both LB\ and UB\ are HIGH, the device assumes a standby mode at which the power dpation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable(WE\) controls both writing and reading of the memory. A data byte allows Upper Byte (UB\) and Lower Byte (LB\) access. The IS62WV5128EBLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm).

技术参数

  • High-speed access time: 35ns, 45ns, 55ns
  • CMOS low power operation
    • Operating Current: 22 mA (max) at 85°C
    • CMOS Standby Current: 3.7uA (typ) at 25°C
  • TTL compatible interface levels
  • Single power supply: 2.2V-3.6V Vdd (IS62/65WV5128EBLL)
  • Three state outputs
  • Industrial and Automotive temperature support
  • Lead-free available

技术特性

查找类似的料号
描述
存储密度 4 Mbit
最大电源电压 3.6 V
集成电路安装 Surface Mount
引脚数 32
集成电路外壳/封装 STSOP-I
额定电源电压 3, 3.3 V
最小电源电压 2.2 V
最低工作温度 -40 °C
最高工作温度 85 °C

ECCN / UNSPSC

描述
ECCN: EAR99
计划交货期 B: 8542320040
HTSN: 8542320041
全部清除 比较 (0/10)