IS62WV5128BLL-55T2LI-TR | ISSI SRAM | Avnet Asia Pacific

闲置警告对话框

由于闲置,您的会话即将超时。请单击“确定”以将您的时间额外延长 30 分钟。

IS62WV5128BLL-55T2LI-TR

SRAM Chip Async Single 3.3V 4M-Bit 512K x 8 55ns 32-Pin TSOP-II T/R

IS62WV5128BLL-55T2LI-TR | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS62WV5128BLL-55T2LI-TR
RoHS 6 Compliant

The ISSI IS62WV5128ALL is highspeed,4M bit static RAMs organized as 512K words by 8bits. It is fabricated using ISSI's high-performance CMOStechnology. This highly reliable process coupled withinnovative circuit design techniques, yields highperformanceand low power consumption devices. When CS1\ is HIGH (deselected) the device assumes astandby mode at which the power dissipation can bereduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs. The active LOW Write Enable(WE)\ controls both writing and reading of the memory. The IS62WV5128ALL and IS62WV5128BLL are packagedin the JEDEC standard 32-pin TSOP (TYPE I), 32-pinsTSOP (TYPE I), 32-pin TSOP (Type II), 32-pin SOP and36-pin mini BGA.

技术参数

  • High-speed access time: 55ns, 70ns
  • CMOS low power operation
    • 36 mW (typical) operating
    • 9 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply
    • 1.65V – 2.2V VDD (IS62WV5128ALL)
    • 2.5V – 3.6V VDD (IS62WV5128BLL)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Industrial temperature available
  • Lead-free available

技术特性

查找类似的料号
描述
集成电路外壳/封装 TSOP-II
额定电源电压 3.3 V
最小电源电压 2.5 V
最高工作温度 85 °C
最低工作温度 -40 °C
最大电源电压 3.6 V
存储密度 4 Mbit
集成电路安装 Surface Mount
引脚数 32

ECCN / UNSPSC

描述
ECCN: 3A991.b.2.a
计划交货期 B: PARTS...
HTSN: PARTS...
全部清除 比较 (0/10)