IS62WV51216BLL-55TLI-TR | ISSI SRAM | Avnet Asia Pacific

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IS62WV51216BLL-55TLI-TR

SRAM Chip Async Single 3.3V 8M-Bit 512K x 16 55ns 44-Pin TSOP-II T/R

IS62WV51216BLL-55TLI-TR | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS62WV51216BLL-55TLI-TR
RoHS 6 Compliant

The ISSI IS62WV51216BLL is a high speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The IS62WV51216BLL is a packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm) and 44-Pin TSOP (TYPE II).

技术参数

  • High-speed access time: 45ns, 55ns
  • CMOS low power operation
    • 36 mW (typical) operating
    • 12 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply
    • 2.5V--3.6V VDD
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available
  • Lead-free available

技术特性

查找类似的料号
描述
最大电源电压 3.6 V
存储密度 8 Mbit
集成电路安装 Surface Mount
引脚数 44
额定电源电压 3.3 V
最低工作温度 -40 °C
集成电路外壳/封装 TSOP-II
最小电源电压 2.5 V
最高工作温度 85 °C

ECCN / UNSPSC

描述
ECCN: 3A991.b.2.a
计划交货期 B: PARTS...
HTSN: PARTS...
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