IS62WV12816BLL-55TLI | ISSI SRAM | Avnet Asia Pacific

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IS62WV12816BLL-55TLI

IC, SRAM, 2 Mbit, 128K x 16bit, 55 ns Access Time, TTL Interface, 2.5 V to 3.6 V supply, TSOP-II-44

IS62WV12816BLL-55TLI | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS62WV12816BLL-55TLI
RoHS 6 Compliant

The ISSI IS62WV12816BLL are high speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices. The IS62WV12816BLL is a packaged in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin TSOP (TYPE II).

技术参数

  • High-speed access time: 45ns, 55ns, 70ns
  • CMOS low power operation
    • 36 mW (typical) operating
    • 9 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single power supply
    • 2.5V--3.6V VDD (62WV12816BLL)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available
  • 2CS Option Available
  • Lead-free available

技术特性

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描述
最大电源电压 3.6 V
集成电路安装 Surface Mount
引脚数 44
最高工作温度 85 °C
额定电源电压 3.3 V
集成电路外壳/封装 TSOP-II
存储密度 2 Mbit
最小电源电压 2.5 V
最低工作温度 -40 °C

ECCN / UNSPSC

描述
ECCN: 3A991.a.1
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