制造商:
ISSI
IS61WV5128BLL-10TLI
SRAM, Asynchronous SRAM, 4 Mbit, 512K x 8bit, TSOP-II, 44 Pins, 2.4 V
安富利制造商模型#:
IS61WV5128BLL-10TLI
RoHS 6 Compliant
The ISSI IS61WV5128BLL are very high-speed, low power, 524,288-word by8-bit CMOS static RAMs. The IS61WV5128BLL is fabricated using ISSI's highperformanceCMOS technology. This highly reliable processcoupled with innovative circuit design techniques,yields higher performance and low power consumptiondevices. When CE is HIGH (deselected), the device assumesa standby mode at which the power dissipation can bereduced down with CMOS input levels.The IS61WV5128BLL operatefrom a single power supply. The IS61WV5128BLL is availablein 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pinTSOP (Type II) packages. The IS61WV5128BLL isavailable in 32-pinTSOP (Type I), 32-pin sTSOP (Type I),32-pin SOP and 32-pin TSOP (Type II) packages.
技术参数
- High-speed access time: 8, 10, 20 ns
- Low Active Power: 85 mW (typical)
- Low stand-by power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV5128ALS/BLS)
- High-speed access time: 25, 35 ns
- Low Active Power: 35 mW (typical)
- Low stand-by power: 0.6 mW (typical) CMOS standby
- Single power supply
- Vdd 1.65V to 2.2V (IS61WV5128Axx)
- Vdd 2.4V to 3.6V (IS61/64WV5128Bxx)
- Fully static operation: no clock or refresh required
- Three state outputs
- Industrial and Automotive temperature support
- Lead-free available
技术特性
查找类似的料号|
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描述 | 值 |
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引脚数 | 44 |
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最大电源电压 | 3.6 V |
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最低工作温度 | -40 °C |
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存储密度 | 4 Mbit |
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集成电路外壳/封装 | TSOP-II |
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集成电路安装 | Surface Mount |
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最高工作温度 | 85 °C |
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额定电源电压 | 3 V |
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最小电源电压 | 2.4 V |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | 3A991.b.2.a |
| 计划交货期 B: | PARTS... |
| HTSN: | PARTS... |