IS61WV51216BLL-10TLI | ISSI SRAM | Avnet Asia Pacific

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IS61WV51216BLL-10TLI

SRAM, 8 Mbit, 512K x 16位, 2.4V 至 3.6V, TSOP-II, 44 引脚, 10 ns

IS61WV51216BLL-10TLI | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS61WV51216BLL-10TLI
RoHS 6 Compliant
Tray

The IS61WV51216BLL-10TLI is a 8Mb high-speed static RAM organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

技术参数

  • High-performance, low-power CMOS process
  • Multiple centre power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation, no clock or refresh required
  • TTL compatible inputs and outputs
  • Data control for upper and lower bytes

技术特性

查找类似的料号
描述
集成电路安装 Surface Mount
引脚数 44
额定电源电压 3.3, 3.3 V
存储密度 8 Mbit
最小电源电压 2.4 V
最高工作温度 85 °C
最低工作温度 -40 °C
集成电路外壳/封装 TSOP-II
最大电源电压 3.6 V

ECCN / UNSPSC

描述
ECCN: 3A991.b.2.a
计划交货期 B: PARTS...
HTSN: PARTS...
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