IS61WV51216BLL-10MLI | ISSI SRAM | Avnet Asia Pacific

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IS61WV51216BLL-10MLI

SRAM, Asynchronous SRAM, 8 Mbit, 512K x 16bit, BGA, 48 Pins, 2.4 V

IS61WV51216BLL-10MLI | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS61WV51216BLL-10MLI
规格书
IS61WV51216BLL-10MLI
RoHS 6 Compliant

The ISSI IS61WV51216BLL is a high-speed, 8M-bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The device is packaged in the JEDEC standard 44-pin TSOP Type II and 48-pin Mini BGA (9mm x 11mm).

技术参数

  • High-speed access times: 8, 10, 20 ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE options
  • CE power-down
  • Fully static operation: no clock or refresh required
  • TTL compatible inputs and outputs
  • Single power supply
    • VDD 2.4V to 3.6V
    • speed = 10ns for VDD 2.4V to 3.6V
    • speed = 8ns for VDD 3.3V + 5%
  • Packages available:
    • 48-ball miniBGA (9mm x 11mm)
    • 44-pin TSOP (Type II)
  • Industrial and Automotive Temperature Support
  • Lead-free available
  • Data control for upper and lower bytes

技术特性

查找类似的料号
描述 值
Timing Type Asynchronous
Maximum Random Access Time 10 ns
产品尺寸 11 x 9 x 0.6 mm
Typical Operating Supply Voltage 2.5, 3.3 V
Number of I/O Lines 16 Bit
Address Bus Width 19 Bit
筛选级别 Industrial
引脚数 48
集成电路外壳/封装 Mini-BGA
集成电路安装 Surface Mount
最大电源电压 3.6 V
存储密度 8 Mbit
额定电源电压 3.3, 3.3 V
最低工作温度 -40 °C
工作温度 -40 to 85 °C
供应商套餐 Mini-BGA
最高加工温度 260
MSL 级别 MSL 3 - 168 hours
安装 Surface Mount
最高工作温度 85 °C
最小电源电压 2.4 V
Number of Bits per Word 16 Bit
Number of Ports 1
铅完成 Tin-Silver-Copper
Maximum Operating Current 95 mA
引脚数 48
Density 8 Mbit
Number of Words 512 kWords

ECCN / UNSPSC

描述 值
ECCN: 3A991.b.2.a
计划交货期 B: PARTS...
HTSN: PARTS...
全部清除 比较 (0/10)