IS61WV25616EDBLL-8BLI | ISSI SRAM | Avnet Asia Pacific

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IS61WV25616EDBLL-8BLI

SRAM Chip Async Single 3.3V 4M-Bit 256K x 16 8ns 48-Pin TFBGA

IS61WV25616EDBLL-8BLI | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS61WV25616EDBLL-8BLI
RoHS 6 Compliant

The ISSI IS61WV25616EDBLL is a high-speed,4,194,304-bit static RAMs organized as 262,144 wordsby 16 bits. It is fabricated using ISSI's high-performanceCMOS technology. This highly reliable process coupledwith innovative circuit design techniques, yields highperformanceand low power consumption devices. When CE is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE and OE. The active LOWWrite Enable (WE) controls both writing and reading of thememory. A data byte allows Upper Byte (UB) and LowerByte (LB) access. The IS61WV25616EDBLL is packaged in the JEDECstandard 44-pin TSOP-II and 48-pin Mini BGA (6mm x8mm).

技术参数

  • High-speed access time: 8, 10 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) CMOS standby
  • Single power supply
    • Vdd 2.4V to 3.6V (10 ns)
    • Vdd 3.3V ± 10% (8 ns)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available
  • Error Detection and Error Correction

技术特性

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描述
最小电源电压 2.4 V
额定电源电压 3.3 V
最高工作温度 85 °C
最低工作温度 -40 °C
最大电源电压 3.6 V
存储密度 4 Mbit
集成电路外壳/封装 TFBGA
集成电路安装 Surface Mount
引脚数 48

ECCN / UNSPSC

描述
ECCN: 3A991.b.2.a
计划交货期 B: PARTS...
HTSN: PARTS...
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