IS61WV25616BLL-10TLI-TR | ISSI SRAM | Avnet Asia Pacific

闲置警告对话框

由于闲置,您的会话即将超时。请单击“确定”以将您的时间额外延长 30 分钟。

IS61WV25616BLL-10TLI-TR

SRAM Chip Async Single 2.5V/3.3V 4M-Bit 256K x 16 10ns 44-Pin TSOP-II T/R

IS61WV25616BLL-10TLI-TR | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS61WV25616BLL-10TLI-TR
RoHS 10 Compliant

The ISSI IS61WV25616BLLis high-speed, 4,194,304-bit static RAMs organized as262,144 words by 16 bits. It is fabricated using ISSI's highperformanceCMOStechnology.Thishighlyreliableprocesscoupled with innovative circuit design techniques, yieldshigh-performance and low power consumption devices.When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE\ and OE\. The active LOWWrite Enable (WE)\ controls both writing and reading of thememory. A data byte allows Upper Byte (UB)\ and LowerByte (LB)\ access. The IS61WV25616BLL ispackaged in the JEDEC standard 44-pin 400mil SOJ,44-pin TSOP Type II and 48-pin Mini BGA (6mm x 8mm).

技术参数

  • High-speed access time: 8, 10, 20 ns
  • Low Active Power: 85 mW (typical)
  • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS)
  • High-speed access time: 25, 35, 45 ns
  • Low Active Power: 35 mW (typical)
  • Low Standby Power: 0.6 mW (typical) CMOS standby
  • Single power supply
    • Vdd 1.65V to 2.2V (IS61WV25616Axx)
    • Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial and Automotive temperature support
  • Lead-free available

技术特性

查找类似的料号
描述
集成电路安装 Surface Mount
引脚数 44
额定电源电压 3.3, 3.3 V
最大电源电压 3.6 V
最小电源电压 2.4 V
最高工作温度 85 °C
最低工作温度 -40 °C
集成电路外壳/封装 TSOP-II
存储密度 4 Mbit

ECCN / UNSPSC

描述
ECCN: 3A991.b.2.a
计划交货期 B: PARTS...
HTSN: PARTS...
全部清除 比较 (0/10)