IS61WV10248BLL-10TLI | ISSI SRAM | Avnet Asia Pacific

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IS61WV10248BLL-10TLI

SRAM, 8 Mbit, 1M x 8位, 2.4V 至 3.6V, TSOP-II, 44 引脚, 10 ns

IS61WV10248BLL-10TLI | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS61WV10248BLL-10TLI
RoHS 6 Compliant

The IS61WV10248BLL-10TLI is a 1M x 8-bit high-speed low power CMOS Static Random Access Memory (SRAM) fabricated using ISSI's high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. It operates from a single power supply and all inputs are TTL-compatible.

技术参数

  • High-speed access time - 10ns
  • High-performance, low-power CMOS process
  • Multiple center power and ground pins for greater noise immunity
  • Easy memory expansion with CE and OE
  • CE Power-down
  • Fully static operation - no clock or refresh required

技术特性

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描述
引脚数 44
集成电路外壳/封装 TSOP-II
最小电源电压 2.4 V
最高工作温度 85 °C
最低工作温度 -40 °C
额定电源电压 3.3, 3.3 V
存储密度 8 Mbit
最大电源电压 3.6 V
集成电路安装 Surface Mount

ECCN / UNSPSC

描述
ECCN: EAR99
计划交货期 B: PARTS...
HTSN: PARTS...
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