IS61C6416AL-12TLI | ISSI SRAM | Avnet Asia Pacific

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IS61C6416AL-12TLI

SRAM Chip Async Single 5V 1M-Bit 64K x 16 12ns 44-Pin TSOP-II

IS61C6416AL-12TLI | SRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, SRAM
安富利制造商模型#: IS61C6416AL-12TLI
RoHS 6 Compliant

The ISSI IS61C6416AL is high-speed, 1,048,576-bit static RAMsorganized as 65,536 words by 16 bits. They are fabricatedusing ISSI's high-performance CMOS technology. This highlyreliable process coupled with innovative circuit design techniques,yields access times as fast as 12 ns with low powerconsumption. When CE\ is HIGH (deselected), the device assumes astandby mode at which the power dissipation can be reduceddown with CMOS input levels. Easy memory expansion is provided by using Chip Enableand Output Enable inputs, CE1\ and CE2. The active LOW WriteEnable (WE\) controls both writing and reading of the memory.A data byte allows Upper Byte (UB) and Lower Byte (LB)access. The IS61C6416AL is packaged in the JEDEC standard 44-pin400-mil SOJ and 44-pin TSOP (Type II).

技术参数

  • High-speed access time: 12 ns, 15ns
  • Low Active Power: 175 mW (typical)
  • Low Standby Power: 1 mW (typical) CMOS standby IS62C6416AL and IS65C6416AL
  • High-speed access time: 35 ns, 45ns
  • Low Active Power: 50 mW (typical)
  • Low Standby Power: 100 µW (typical) CMOS standby
  • TTL compatible interface levels
  • Single 5V ± 10% power supply
  • Fully static operation: no clock or refresh required
  • Available in 44-pin SOJ package and 44-pin TSOP (Type II)
  • Commercial, Industrial and Automotive temperature ranges available
  • Lead-free available

技术特性

查找类似的料号
描述
额定电源电压 5 V
集成电路外壳/封装 TSOP-II
存储密度 1 Mbit
集成电路安装 Surface Mount
引脚数 44
最高工作温度 85 °C
最低工作温度 -40 °C
最大电源电压 5.5 V
最小电源电压 4.5 V

ECCN / UNSPSC

描述
ECCN: 3A991.b.2.a
计划交货期 B: PARTS...
HTSN: PARTS...
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