IS43TR16256BL-125KBLI | ISSI DRAM | Avnet Asia Pacific

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IS43TR16256BL-125KBLI

DRAM, DDR3L, 4 Gbit, 256M x 16bit, 800 MHz, BGA, 96 Pins

IS43TR16256BL-125KBLI | DRAM | ISSI
ISSI
制造商: ISSI
产品分类: 内存, DRAM
安富利制造商模型#: IS43TR16256BL-125KBLI
RoHS 10 Compliant

IS43TR16256BL-125KBLI is a 1600MT/s 256Mx16 4Gb DDR3 SDRAM. The memory controller initiates levelling mode of all DRAMs by setting bit 7 of MR1 to 1. When entering write levelling mode, the DQ pins are in undefined driving mode. During write levelling mode, only NOP or DESELECT commands are allowed, as well as an MRS command to exit write levelling mode. The controller may drive DQS low and DQS# high after a delay of tWLDQSEN, at which time the DRAM has applied on-die termination on these signals. After tDQSL and tWLMRD, the controller provides a single DQS, DQS# edge which is used by the DRAM to sample CK - CK# driven from controller.

技术参数

  • Standard voltage is VDD and VDDQ = 1.5V ± 0.075V
  • High-speed data transfer rates with system frequency up to 1066MHz
  • 8 internal banks for concurrent operation, 8n-bit pre-fetch architecture
  • Programmable CAS latency, programmable additive latency: 0, CL-1, CL-2
  • Programmable CAS WRITE latency (CWL) based on tCK, programmable burst length: 4 and 8
  • Programmable burst sequence: sequential or interleave, BL switch on the fly
  • Auto self refresh(ASR), self refresh temperature (SRT)
  • Partial array self-refresh, the asynchronous RESET pin, write levelling
  • 96-ball BGA package
  • Industrial rating range from -40°C ≤ TC ≤ 95°C

技术特性

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描述
引脚数 96
最高工作温度 95 °C
存储密度 4 Gbit
额定电源电压 1.35 V
最低工作温度 -40 °C
时钟频率最大值 800 MHz

ECCN / UNSPSC

描述
ECCN: EAR99
计划交货期 B: 8542320050
HTSN: 8542320036
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