制造商:
ISSI
IS42S32400F-6TLI
DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II
安富利制造商模型#:
IS42S32400F-6TLI
RoHS 6 Compliant
NCNR
ISSI's 128Mb Synchronous DRAM achieves high-speeddata transfer using pipeline architecture. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4Banks.
技术参数
- Clock frequency: 166, 143, 133 MHz
- Fully synchronous; all signals referenced to a positive clock edge
- Internal bank for hiding row access/precharge
- Single Power supply: 3.3V + 0.3V
- LVTTL interface
- Programmable burst length
- (1, 2, 4, 8, full page)
- Programmable burst sequence: Sequential/Interleave
- Auto Refresh (CBR)
- Self Refresh
- 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
- Random column address every clock cycle
- Programmable CAS latency (2, 3 clocks)
- Burst read/write and burst read/single write operations capability
- Burst termination by burst stop and precharge command
技术特性
查找类似的料号|
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描述 | 值 |
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集成电路安装 | Surface Mount |
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存储密度 | 128 Mbit |
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时钟频率最大值 | 166 MHz |
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引脚数 | 86 |
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最低工作温度 | -40 °C |
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最高工作温度 | 85 °C |
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额定电源电压 | 3.3 V |
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集成电路外壳/封装 | TSOP-II |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | PARTS... |
| HTSN: | PARTS... |