GS881Z36CGD-150 | Gsi Technology SRAM | Avnet Asia Pacific

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GS881Z36CGD-150

SRAM Chip Sync Single 2.5V/3.3V 9M-Bit 256K x 36 7.5ns/3.8ns 165-Pin FBGA Tray

GS881Z36CGD-150 | SRAM | Gsi Technology
Gsi Technology
制造商: Gsi Technology
产品分类: 内存, SRAM
安富利制造商模型#: GS881Z36CGD-150
RoHS 10 Compliant

The GS881Z36C(T/D) is a 9Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable, ZZ and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off chip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GS881Z36C(T/D) may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. The GS881Z36C(T/D) is implemented with GSI's high performance CMOS technology and is available in a JEDEC-standard 100-pin TQFP package.

技术参数

  • User-configurable Pipeline and Flow Through mode
  • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization
  • Fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs
  • IEEE 1149.1 JTAG-compatible Boundary Scan
  • 2.5 V or 3.3 V +10%/–10% core power supply
  • 2.5 V or 3.3 V I/O supply
  • LBO pin for Linear or Interleave Burst mode
  • Pin-compatible with 2M, 4M, and 18M devices
  • Byte write operation (9-bit Bytes)
  • 3 chip enable signals for easy depth expansion
  • ZZ pin for automatic power-down
  • JEDEC-standard packages
  • RoHS-compliant 100-lead TQFP and 165-bump BGA packages available

技术特性

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描述
时钟频率最大值 150 MHz
存储密度 9 Mbit
额定电源电压 3.3, 3.3 V
集成电路安装 Surface Mount
集成电路外壳/封装 FBGA
最低工作温度 0 °C
最高工作温度 70 °C
最大电源电压 3.6, 3.6 V
引脚数 165
最小电源电压 3, 3 V
SRAM类型 SDR

ECCN / UNSPSC

描述
ECCN: 3A991.b.2.a
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