制造商:
Alliance Memory
AS6C2016-55ZIN
SRAM Chip Async Single 3V 2M-Bit 128K x 16 55ns 44-Pin TSOP-II
安富利制造商模型#:
AS6C2016-55ZIN
RoHS 10 Compliant
The AS6C2016 is a 2,097,152-bit low power CMOS static random access memory organized as 131,072 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.The AS6C2016 is well designed for low power application, and particularly well suited for battery back-up nonvolatile memory application. The AS6C2016 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible.
技术参数
- Fast access time : 55ns
- Low power consumption:
- Operating current : 20/18mA (TYP.)
- Standby current : 2µA (TYP.)
- Single 2.7V ~ 5.5V power supply
- All inputs and outputs TTL compatible
- Fully static operation
- Tri-state output
- Data byte control :
- LB# (DQ0 ~ DQ7)
- UB# (DQ8 ~ DQ15)
- Data retention voltage : 2.0V (MIN.)
- Lead free and green package available
- Package : 44-pin 400 mil TSOP-II
- 48-ball 6mm x 8mm TFBGA
技术特性
查找类似的料号|
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描述 | 值 |
|---|---|---|
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最低工作温度 | -40 °C |
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最大电源电压 | 5.5 V |
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最高工作温度 | 85 °C |
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额定电源电压 | 3 V |
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最小电源电压 | 2.7 V |
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存储密度 | 2 Mbit |
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集成电路外壳/封装 | TSOP-II |
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引脚数 | 44 |
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集成电路安装 | Surface Mount |
ECCN / UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 计划交货期 B: | PARTS... |
| HTSN: | PARTS... |