Manufacturer:
Diodes Incorporated
BSS123Q-13
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
Avnet Manufacturer Part #:
BSS123Q-13
RoHS 10 Compliant
These N-Channel enhancement mode field effect transistors are produced using high density, uses advanced trench technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as: Small Servo Motor Control, Power MOSFET Gate Drivers, Switching Applications.
Key Features
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/output Leakage
- High Drain-Source Voltage Rating
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free; “Green” Device
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable
Technical Attributes
Find Similar Parts|
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Description | Value |
|---|---|---|
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Operating Temperature Max | 150 |
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Rds(on) Test Voltage | 10 |
|
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MSL Level | MSL 1 - Unlimited |
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Drain Source Voltage Vds | 100 |
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Transistor Mounting | Surface Mount |
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Transistor Case Style | SOT-23 |
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Continuous Drain Current Id | 170 |
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Drain Source On State Resistance | 6 |
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Power Dissipation | 300 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| ECCN: | EAR99 |
| SCHEDULE B: | 8541210080 |
| HTSN: | 8541210095 |
Documents
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Documents
| Title | Download | Type | Date Published |
|---|---|---|---|
| Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products | PCN-Documentation | 20201204 |