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Considerations when designing with wide bandgap devices

SiC and GaN wide bandgap semiconductor switches can provide a step improvement in efficiency in power converters. Engineers should be aware that they have different secondary characteristics compared with Si-MOSFETS and IGBTs.

Selecting wide bandgap devices for motor control applications

When it comes to smart control applications, it’s worth taking a step back to consider when and if the switch to wide bandgap from MOSFET or IGBT makes sense. When the answer is yes, then the decision is whether SiC or GaN is the way to go.

Three design freedoms enabled by SiC technology

Even with the undeniable performance and potential of silicon carbide (SiC) technology, some designers may be hesitant initially to tackle new projects using SiC.

The undeniable advantages of SiC technology over Si

Silicon carbide (SiC) technology has reached the tipping point, the state when undeniable advantages push a technology into rapid adoption.

The undeniable advantages of SiC technology over Si

Silicon carbide (SiC) technology has reached the tipping point, the state when undeniable advantages push a technology into rapid adoption.

The substantial benefits of silicon carbide (SiC) and gallium nitride (GaN) in power electronics

Silicon carbide (SiC) and gallium nitride (GaN) are two semiconductor materials that are creating a significant shift in the power electronics market.