SiC658A Series
High-Performance VRPower® Integrated Power Stage
Features Vishay’s cutting-edge TrenchFET® technology, delivering industry-leading efficiency by minimizing switching and conduction losses. Integrated MOSFET gate drivers in both devices provide high current drive capability, adaptive dead-time control, an integrated bootstrap component, and zero current detection to enhance light load efficiency.
Vishay SiC658A Series is high-performance integrated power stage solution, optimized for synchronous buck applications requiring high current, high efficiency, and high power density. Housed in a compact 5 mm x 5 mm MLP package and support up to 50 A continuous current per phase, making it ideal for advanced voltage regulator designs.
The SiC658A features a junction temperature sensor that provides direct thermal protection. SiC658A also includes an over-current protection feature. When the high-side FET current exceeds the current limit, the device will terminate the high-side FET conduction immediately and turn on the low-side FET. It supports tri-state PWM with 3.3 V logic level.
Features
- Thermally enhanced PowerPAK® MLP55-31L package, compact 5 mm x 5 mm
- High switching frequency (up to 1.5 MHz)
- Power MOSFETs optimized for 12 V input stage
- Zero current detect control for light load efficiency improvement
- Low PWM propagation delay
- Under voltage lockout protection and thermal protection
- High-side FET short protection (SIC658A)
- 50 A continuous current capability
Application
Multi-phase VRDs for CPU, GPU, and memory
