IL410-X007T

The IL410 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line package.

High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2 mA (DC). The use of a proprietary dV/dt clamp results in a static dV/dt of greater than 10 kV/ms. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver.

The zero cross line voltage detection circuit consists of two enhancement MOSFETS and a photodiode. The inhibit voltage of the network is determined by the enhancement voltage of the N-channel FET. The P-channel FET is enabled by a photocurrent source that permits the FET to conduct the main voltage to gate on the N-channel FET. Once the main voltage can enable the N-channel, it clamps the base of the phototransistor, disabling the first stage SCR predriver.

• High input sensitivity
• I_FT = 2 mA, PF = 1.0
• I_FT = 5 mA, PF = 1.0
• 300 mA on-state current
• Zero voltage crossing detector
• 600 V, 800 V blocking voltage
• High static dV/dt 10 kV/µs
• Very low leakage < 10 µA
• Isolation test voltage 5300 V_RMS
• Small 6 pin DIP package
• Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC