TLP5751(D4-TP,E(T

The TLP5751 consists of a GaAlAs infrared light-emitting diode and integrated high-gain, high-speed photo detector and is house in the 6-pin SO6L package.

The TLP5751 is 50 % smaller than the 8-pin DIP package and meets the reinforced insulation class requirements of international safety standards. Therefore the mounting area can be reduced in equipment requiring the safety standard certification.

The TLP5751 has an internal faraday shield that provides a guaranteed common-mode transient immunity of ±35 kV/µs. In particular, the TLP5751 has rail to rail output, and this enables stable operation and better switching performance in system.

• Buffer logic type (totem pole output)
• Output peak current: ± 1.0 A (max)
• Operating temperature: -40 to 110 °C
• Supply current: 3 mA (max)
• Supply voltage: 15 to 30 V
• Threshold input current: 4 mA (max)
• Propagation delay time: 150 ns (max)
• Common-mode transient immunity: ±35 kV/ µs (min)
• Isolation voltage: 5000 Vrms (min)
• Safety standards
  • UL-approved: UL1577
  • cUL-approved: CSA Component Acceptance Service No.5A
  • VDE-approved: EN60747-5-5, EN60065, EN60950-1, EN 62368-1