NSVBAT54SWT1G

NSVBAT54SWT1G is a dual series schottky barrier diode. It is designed for high-speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand-held and portable applications where space is limited.

• Extremely fast switching speed, AEC-Q101 Qualified and PPAP Capable
• Forward voltage is 0.35V typ (IF = 10mA, TA = 25°C)
• Reverse voltage is 30V (TJ = 125°C), total power dissipation is 200mW at TA = 25°C
• Forward current (DC) is 200mA, non-repetitive peak forward current tp 10 msec is 600mA
• Repetitive peak forward current is 300mA (Pulse Wave = 1 sec, Duty Cycle = 66%)
• Reverse leakage is 0.5µA typ (VR = 25V, TA = 25°C)
• Total capacitance is 7.6pF typ (VR = 1.0V, f = 1.0MHz, TA = 25°C)
• Reverse recovery time is 5.0ns (IF = IR = 10mAdc, IR(REC) = 1.0mAdc, TA = 25°C)
• Reverse breakdown voltage is 30V min (IR = 10A, TA = 25°C)
• SOT-323 package, junction temperature range from -55 to 125°C