FQD12N20LTM
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mO, DPAK
The FQD12N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 16nC typical low gate charge
- 17pF typical low Crss
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 9 A | ||
| 280 mOhm | ||
| 200 V | ||
| 2 V | ||
| 3 | ||
| 150 °C | ||
| 55 W | ||
| TO-252 (DPAK) | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: