FDN352AP
Power MOSFET, P Channel, 30 V, 1.3 A, 0.18 ohm, SuperSOT, Surface Mount
The FDN352AP is a P-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
- High performance trench technology for extremely low RDS (on)
Technical Attributes
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| Description | Value | |
|---|---|---|
| P Channel | ||
| 1.3 A | ||
| 180 mOhm | ||
| 30 V | ||
| 2.5 V | ||
| 3 | ||
| 150 °C | ||
| 500 mW | ||
| PowerTrench | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
Factory Lead Time: