FDMS7660

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on, fast switching speed and body diode reverse recovery performance.

• Max rDS(on) = 2.8 mO at VGS = 10 V, ID = 25 A
• Max rDS(on) = 3.5 mO at VGS = 4.5 V, ID = 19 A
• Advanced Package and Silicon combination for low rDS(on) and high efficiency
• Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter
• applications
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant