FDMS3669S
- Q1: N-Channel
- Max rDS(on) = 10 mO at VGS = 10 V, ID = 13 A
- Max rDS(on) = 14.5 mO at VGS = 4.5 V, ID = 10 A
- Q2: N-Channel
- Max rDS(on) = 5 mO at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.2 mO at VGS = 4.5 V, ID = 17 A
- Low inductance packaging shortens rise/fall times, resulting in lower switching losses
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS Compliant
Technical Attributes
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| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| null | ||
| 75 A | ||
| 5000 µohm | ||
| 0.01 ohm | ||
| 30 V | ||
| 30 V | ||
| null | ||
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| 150 °C | ||
| 2.5 W - for conversion only | ||
| 2.5 W - for conversion only | ||
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ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412900 |
| Schedule B: | 85412900 |
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