FDG6301N
Dual N-Channel Digital FET 25 V, 0.22 A, 4 O
The FDG6301N is a dual N-channel logic level enhancement-mode Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signals MOSFETs.
- Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) 1.5V)
- Gate-source Zener for ESD ruggedness (6kV human body model)
- Compact industry standard surface-mount-package
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| Dual N Channel | ||
| 0.22 | ||
| 4 | ||
| 25 | ||
| 6 | ||
| 150 °C | ||
| 300 | ||
| AEC-Q101 | ||
| SOT-363 |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541210095 |
| Schedule B: | 8541210080 |
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