FDC8601
N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mO
The FDC8601 is a N-channel MOSFET produced using Fairchild Semiconductor‘s advanced PowerTrench® process. It is suitable for use in load switch, synchronous rectifier and primary switch applications.
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
- Fast switching speed
- 100% UIL tested
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 2.7 | ||
| 109 | ||
| 100 | ||
| 4 | ||
| 6 | ||
| 150 °C | ||
| 1.6 | ||
| SuperSOT | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 8541290095 |
| Schedule B: | 8541290080 |
Factory Lead Time: