PMV45EN2R
Power MOSFET, N Channel, 30 V, 5.1 A, 0.042 ohm, SOT-23, Surface Mount
PMV45EN2R is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, switching circuits.
- Logic level compatible, very fast switching
- Drain-source breakdown voltage is 30V min at ID = 250µA; VGS = 0V; Tj = 25°C
- Gate-source threshold voltage is 1.5V typ at ID = 250µA; VDS=VGS; Tj = 25°C
- Drain leakage current is 1µA max at VDS = 30V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 35mohm typ at VGS = 10V; ID = 4.1A; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 1A; VGS = 0V; Tj = 25°C
- Rise time is 12ns typ at VDS = 15 V; ID = 3.2A; VGS = 10V;RG(ext) = 6ohm; Tj = 25°C
- Fall time is 2ns typ at VDS = 15 V; ID = 3.2A; VGS = 10V;RG(ext) = 6ohm; Tj = 25°C
- Ambient temperature range from -55°C to +150°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 4.1 | ||
| 42 | ||
| 30 | ||
| 2 | ||
| 3 | ||
| 150 °C | ||
| 1.115 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412100 |
| Schedule B: | 85412100 |
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