PMV280ENEAR
Transistor MOSFET N-CH 100V 1.1A 3-Pin TO-236AB T/R
PMV280ENEAR is a N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Typical applications include relay driver, high-speed line driver, low-side load switch, switching circuits.
- Logic level compatible, AEC-Q101 qualified
- ElectroStatic Discharge (ESD) protection > 2kV HBM (class H2)
- Drain-source breakdown voltage is 100V min at ID = 250µA; VGS = 0V; Tj = 25°C
- Gate-source threshold voltage is 1.7V typ at ID = 250µA; VDS=VGS; Tj = 25°C
- Drain leakage current is 1µA max at VDS = 100V; VGS = 0V; Tj = 25°C
- Drain-source on-state resistance is 285mohm typ at VGS = 10V; ID = 1.1A; Tj = 25°C
- Source-drain voltage is 0.8V typ at IS = 1A; VGS = 0V; Tj = 25°C
- Gate resistance is 1.8ohm typ at f = 1MHz
- Ambient temperature range from -55°C to +175°C
Technical Attributes
Find Similar Parts
| Description | Value | |
|---|---|---|
| N Channel | ||
| 1.1 | ||
| 385 | ||
| 100 | ||
| 2.7 | ||
| 3 | ||
| 150 °C | ||
| 1.14 | ||
| AEC-Q101 | ||
| SOT-23 | ||
| Surface Mount |
ECCN / UNSPSC / COO
| Description | Value |
|---|---|
| Country of Origin: | null |
| ECCN: | EAR99 |
| HTSN: | 85412100 |
| Schedule B: | 85412100 |
Factory Lead Time: