TC58NVG1S3HTAI0

The TC58NVG1S3HTAI0 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 ? 128) bytes ? 64 pages ? 2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes ? 8 Kbytes: 2176 bytes ? 64 pages).

Organization x8 Memory cell array 2176 ? 128K ? 8 Register 2176 ? 8 Page size 2176 bytes Block size (128K ? 8K) bytes ? Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read ? Mode control Serial input/output Command control ? Number of valid blocks Min 2008 blocks Max 2048 blocks ? Power supply VCC ? 2.7V to 3.6V ? Access time Cell array to register 25 ?s max Serial Read Cycle 25 ns min (CL=50pF) ? Program/Erase time Auto Page Program 300 ?s/page typ. Auto Block Erase 2.5 ms/block typ. ? Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 ?A max