2N7002A-7

2N7002A-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications and motor control.

• Low on-resistance, low gate threshold voltage
• Low input capacitance, fast switching speed
• Small surface mount package
• ESD protected gate, 1.2kV HBM, 1kV CDM
• Drain-source voltage is 60V at TA=+25°C
• Gate-source voltage is ±20V at TA=+25°C
• Pulsed drain current (10µs pulse, duty cycle=1%) is 800mA at TA=+25°C
• Static drain-source on-resistance is 3.5ohm typ at VGS=5.0V, ID=0.115A, TJ=+25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C