製造商:
onsemi
SBC847BPDW1T3G
Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 380 mW
替代料號:
SBC847BPDW1T3G
RoHS 10 Compliant
The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.
技術參數
- Collector − Emitter Breakdown Voltage 45 V
- Pb−Free Devices are available
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
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MSL 級別 | MSL 1 - Unlimited |
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最高工作溫度 | 150 |
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過渡頻率PNP | 100 |
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電晶體極性 | Complementary |
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最大集電極發射極電壓PNP | 45 |
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過渡頻率NPN | 100 |
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連續集電極電流PNP | 100 |
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引腳數 | 6 |
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電晶體安装 | Surface Mount |
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直流電流增益hFE最小值PNP | 200 |
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功率耗散NPN | 380 |
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電晶體外殼樣式 | SOT-363 |
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直流電流增益hFE最小值NPN | 200 |
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最大集電極發射極電壓NPN | 45 |
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連續集電極電流NPN | 100 |
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產品範圍 | BC847BPDW1 Ser |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8541210080 |
| HTSN: | 8541210095 |