NST847BDP6T5G | onsemi 雙極電晶體陣列 | Avnet Asia Pacific

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NST847BDP6T5G

Trans GP BJT NPN 45V 0.1A 6-Pin SOT-963 T/R

NST847BDP6T5G | 雙極電晶體陣列 | onsemi
onsemi
製造商: onsemi
替代料號: NST847BDP6T5G
RoHS 10 Compliant

The Dual NPN Bipolar Transistor device is a spin off of our popular SOT23, SOT323, SOT563 three leaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 six leaded surface mount package. With two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.

技術參數

  • hFE, 200-450
  • Low VCE(sat),<0.25>
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • This is a Pb-Free Device
  • NPN General Purpose Transistor

技術屬性

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描述
MSL 級別 MSL 1 - Unlimited
電晶體極性 Dual NPN
最高工作溫度 150
功率耗散NPN 420
電晶體安装 Surface Mount
引腳數 6
電晶體外殼樣式 SOT-963
過渡頻率NPN 100
最大集電極發射極電壓NPN 45
直流電流增益hFE最小值NPN 200
連續集電極電流NPN 100

ECCN/UNSPSC

描述
ECCN: EAR99
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