NDSH25170A | onsemi 碳化矽蕭特基二極體 | Avnet Asia Pacific

閒置警告對話框

您的階段作業因為閒置而即將逾時。按一下「確定」以延長您的時間 30 分鐘。

NDSH25170A

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L Silicon Carbide Schottky Diode 1700 V, 25 A

NDSH25170A | 碳化矽蕭特基二極體 | onsemi
替代料號: NDSH25170A
RoHS 6 Compliant

NDSH25170A is an EliteSiC silicon carbide (SiC) schottky diode. Silicon carbide (SiC) Schottky diode uses a completely new technology that provides superior switching performance and higher reliability compared to silicon. No reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance set silicon carbide as the next generation of power semiconductors. System benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. Applications include SMPS, solar inverter, UPS, power switching circuits.

技術參數

  • Maximum junction temperature is 175°C
  • Avalanche rated 506mJ
  • High surge current capacity, positive temperature coefficient
  • Ease of paralleling, no reverse recovery/no forward recovery
  • Forward voltage is 1.50V typical at IF = 25A, TJ = 25°C
  • Reverse current is 0.08µA typical at VR = 1700V, TJ = 25°C
  • Total capacitive charge is 169nC typical at V = 800V
  • TO-247-2LD package

技術屬性

查找類似的料號
描述
反向重複峰值電壓 1.7
二極體外殼樣式 Single
二極體安装 Through Hole
正向平均電流 35
二極體外殼樣式 TO-247

ECCN/UNSPSC

描述
ECCN: EAR99
全部清除 比較 (0/10)