製造商:
onsemi
MMBT589LT1G
Single Bipolar Transistor, PNP, 30 V, 1 A, 310 mW, SOT-23, 3 Pin, Surface Mount
替代料號:
MMBT589LT1G
RoHS 10 Compliant
MMBT589LT1G is a high current surface mount PNP silicon switching transistor for load management in portable applications.
技術參數
- Collector-emitter voltage is -30VDC max (TA = 25°C)
- Collector-base voltage is -50VDC max (TA = 25°C)
- Emitter-base voltage is -5.0VDC max (TA = 25°C)
- Collector current - continuous is -1.0ADC max (TA = 25°C)
- Collector current - peak is -2.0A max (TA = 25°C)
- Total Device Dissipation FR-5 Board is 310mW max (TA = 25°C)
- Thermal resistance junction-to-ambient is 403°C/W max (TA = 25°C)
- Cutoff frequency is 100mHz min (IC = -100mA, VCE = -5.0V, f = 100MHz, TA = 25°C)
- SOT-23 package
- Junction temperature range from -55 to +150°C
技術屬性
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描述 | 值 |
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功率耗散 | 310 mW |
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直流電流增益hFE最小值 | 100 |
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MSL 級別 | MSL 1 - Unlimited |
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電晶體極性 | PNP |
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過渡頻率 | 100 MHz |
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最大集電極發射極電壓 | 30 V |
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電晶體安装 | Surface Mount |
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連續集電極電流 | 1 A |
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電晶體外殼樣式 | SOT-23 |
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引腳數 | 3 |
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最高工作溫度 | 150 |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | PARTS... |
| HTSN: | PARTS... |