製造商:
onsemi
FGH75T65SQDT-F155
Transistor I GBT N-CH 650V 150A 3-Pin TO-247 Tube
替代料號:
FGH75T65SQDT-F155
RoHS 10 Exempt
Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation IGBTs offer he optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
技術參數
- Maximum Junction Temperature: TJ = 175 o C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V ( Typ.) @ I C = 75 A
- 100% of the Parts tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- RoHS Compliant
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
|
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最高工作溫度 | 175 |
|
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功率耗散 | 375 |
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連續集電極電流 | 150 |
|
|
電晶體安装 | Through Hole |
|
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引腳數 | 3 |
|
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最大集電極發射極電壓 | 650 |
|
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集電極發射極飽和電壓 | 1.6 |
|
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電晶體外殼樣式 | TO-247 |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8541290080 |
| HTSN: | 8541290095 |
文件
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文檔
| 標題 | 下載 | 類別 | 發布日期 |
|---|---|---|---|
| Change TO247 mold downset A1 remark position from lead tip to lead root. | Errata-Sheets | 20200106 |