製造商:
onsemi
FGD3N60LSDTM
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK Tube
替代料號:
FGD3N60LSDTM
RoHS 10 Exempt
NCNR
The Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
技術參數
- High Current Capability
- Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A
- High Input Impedance
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
|
|
電晶體安装 | Surface Mount |
|
|
最大集電極發射極電壓 | 600 |
|
|
連續集電極電流 | 6 |
|
|
功率耗散 | 40 |
|
|
MSL 級別 | MSL 1 - Unlimited |
|
|
集電極發射極飽和電壓 | 1.8 |
|
|
電晶體外殼樣式 | TO-252 (DPAK) |
|
|
引腳數 | 3 |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8541290080 |
| HTSN: | 8541290095 |
文件
您需要登錄才能查看內容
文檔
| 標題 | 下載 | 類別 | 發布日期 |
|---|---|---|---|
| FGD3N60LSDTM TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | Part-Block-Diagram | 20050620 |