製造商:
onsemi
BC848CPDW1T1G
Trans GP BJT NPN/PNP 30V 0.1A 6-Pin SOT-363 T/R
替代料號:
BC848CPDW1T1G
RoHS 10 Compliant
The Dual NPN PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88 package, which is designed for low power surface mount applications.
技術參數
- Collector − Emitter Breakdown Voltage 30 V
- Pb−Free Devices are available
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
|
|
電晶體外殼樣式 | SOT-363 |
|
|
產品範圍 | BC848CPDW1 Ser |
|
|
功率耗散NPN | 380 |
|
|
電晶體極性 | Complementary, PNP |
|
|
電晶體安装 | Surface Mount |
|
|
引腳數 | 6 |
|
|
直流電流增益hFE最小值PNP | 420 |
|
|
最高工作溫度 | 150 °C |
|
|
連續集電極電流NPN | 100 |
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過渡頻率PNP | 100 |
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連續集電極電流PNP | 100 |
|
|
直流電流增益hFE最小值NPN | 420 |
|
|
最大集電極發射極電壓PNP | 30 |
|
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最大集電極發射極電壓NPN | 30 |
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|
過渡頻率NPN | 100 |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | PARTS... |
| HTSN: | PARTS... |