製造商:
Nexperia
PBSS4560PA115
Trans GP BJT NPN 60V 6A 3-Pin HUSON3 T/R
替代料號:
PBSS4560PA,115
RoHS 6 Compliant
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement: PBSS5560PA.
技術參數
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
- Exposed heat sink for excellent thermal and electrical conductivity
- Leadless small SMD plastic package with medium power capability
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
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最高工作溫度 | 150 |
|
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直流電流增益hFE最小值 | 280 |
|
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電晶體外殼樣式 | SOT-1061 |
|
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最大集電極發射極電壓 | 60 |
|
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連續集電極電流 | 6 |
|
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MSL 級別 | MSL 1 - Unlimited |
|
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過渡頻率 | 150 |
|
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電晶體極性 | NPN |
|
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引腳數 | 3 |
|
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電晶體安装 | Surface Mount |
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功率耗散 | 2.1 |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8541290080 |
| HTSN: | 8541290075 |