製造商:
Nexperia
PBSS4160PANP115
Trans GP BJT NPN/PNP 60V 1A 6-Pin DFN T/R
替代料號:
PBSS4160PANP,115
RoHS 10 Compliant
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.
技術參數
- Very low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- Reduced Printed-Circuit Board (PCB) requirements
- High efficiency due to less heat generation
- AEC-Q101 qualified
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
|
|
MSL 級別 | MSL 1 - Unlimited |
|
|
最高工作溫度 | 150 |
|
|
電晶體極性 | NPN |
|
|
引腳數 | 6 |
|
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電晶體外殼樣式 | SOT-1118 |
|
|
連續集電極電流NPN | 1 |
|
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電晶體安装 | Surface Mount |
|
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最大集電極發射極電壓PNP | 60 |
|
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連續集電極電流PNP | 1 |
|
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功率耗散PNP | 1.45 |
|
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直流電流增益hFE最小值PNP | 170 |
|
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最大集電極發射極電壓NPN | 60 |
|
|
過渡頻率NPN | 175 |
|
|
直流電流增益hFE最小值NPN | 290 |
|
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過渡頻率PNP | 125 |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8541290080 |
| HTSN: | 8541290075 |