製造商:
Nexperia
PBSS4160DSH
Trans GP BJT NPN 60V 1A 6-Pin TSOP T/R
替代料號:
PBSS4160DSH
RoHS 10 Compliant
NPN/NPN low Vcesat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP/PNP complement: PBSS5160DS.
技術參數
- Low collector-emitter saturation voltage Vcesat
- High collector current capability: Ic and Icm
- High collector current gain (hfe) at high Ic
- High efficiency due to less heat generation
- Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
|
|
最高工作溫度 | 150 |
|
|
功率耗散NPN | 700 |
|
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最大集電極發射極電壓NPN | 60 |
|
|
過渡頻率NPN | 220 |
|
|
引腳數 | 6 |
|
|
電晶體外殼樣式 | SOT-457 |
|
|
連續集電極電流NPN | 1 |
|
|
電晶體極性 | Dual NPN |
|
|
直流電流增益hFE最小值NPN | 250 |
|
|
MSL 級別 | 1 |
|
|
電晶體安装 | Surface Mount |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8541290080 |
| HTSN: | 8541290075 |