製造商:
Nexperia
PBLS6003D115
Trans Digital BJT NPN/PNP 50V/60V 100mA/1A 6-Pin TSOP T/R
替代料號:
PBLS6003D,115
RoHS 10 Compliant
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package.
技術參數
- Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
- Low threshold voltage (< 1 V) compared to MOSFET
- Low drive power required
- Space-saving solution
- Reduction of component count
- AEC-Q101 qualified
技術屬性
查找類似的料號|
|
描述 | 值 |
|---|---|---|
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連續集電極電流 | 100@NPN|1000@PNP |
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電晶體安装 | Surface Mount |
|
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引腳數 | 6 |
|
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資質 | AEC-Q101 |
|
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最高工作溫度 | 150 °C |
|
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電晶體外殼樣式 | SOT-457 |
|
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最大集電極發射極電壓NPN | 50 |
|
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電晶體極性 | NPN |
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基極射極輸入電阻R2 | 10 |
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最大集電極發射極電壓PNP | 60 |
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基極輸入電阻R1 | 10 kOhm |
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直流電流增益hFE最小值 | 30@5mA@5V|200@1mA@5V |
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MSL 級別 | MSL 1 - Unlimited |
ECCN/UNSPSC
| 描述 | 值 |
|---|---|
| ECCN: | EAR99 |
| 計劃交貨期 B: | 8541100080 |
| HTSN: | 8541210095 |